Electronic Components Datasheet Search |
|
SI5511DC Datasheet(PDF) 1 Page - Vishay Siliconix |
|
SI5511DC Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si5511DC Document Number: 73787 S-72204-Rev. B, 22-Oct-07 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETs APPLICATIONS • Buck-Boost - DSC - Portable Devices PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) N-Channel 30 0.055 at VGS = 4.5 V 4a,g 4.2 nC 0.090 at VGS = 2.5 V 4a,g P-Channel - 30 0.150 at VGS = - 4.5 V - 3.6a 2.85 nC 0.256 at VGS = - 2.5 V - 2.7a Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) Marking Code EE XXX Lot Traceability and Date Code Part # Code Bottom View S1 G1 S2 G2 D1 D1 D2 D2 1 1206-8 Chip-FET ® N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 s d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel. g. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4a, g - 3.6a A TC = 70 °C 4a, g - 2.8a TA = 25 °C 4a, g - 2.3b, c TA = 70 °C 3.9a - 1.8b, c Pulsed Drain Current IDM 15 - 10 Source Drain Current Diode Current TC = 25 °C IS 2.6 - 2.6 TA = 25 °C 1.7b, c - 1.7b, c Maximum Power Dissipation TC = 25 °C PD 3.1 2.6 W TC = 70 °C 2.0 1.7 TA = 25 °C 2.1b, c 1.3b, c TA = 70 °C 1.33b, c 0.84b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ Max Typ Max Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 50 60 77 95 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 33 40 RoHS COMPLIANT |
Similar Part No. - SI5511DC |
|
Similar Description - SI5511DC |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |