BPW17N_08 datasheet(2/5 Pages) VISHAY

Part #	BPW17N

Description	Silicon NPN Phototransistor,

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 5 page

Document Number: 81516

For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com

Rev. 1.7, 08-Sep-08

371

BPW17N

Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

Fig. 2 - Collector Dark Current vs. Ambient Temperature

Fig. 3 - Relative Collector Current vs. Ambient Temperature

020

40

60

80

0

25

50

75

100

125

T

amb - Ambient Temperature (°C)

100

94 8308

R

thJA = 450 K/W

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector emitter breakdown voltage

IC = 1 mA

V(BR)CEO

32

V

Collector emitter dark current

VCE = 20 V, E = 0

ICEO

1

200

nA

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, E = 0

CCEO

8pF

Collector light current

Ee = 1 mW/cm2, λ = 950 nm,

VCE = 5 V

Ica

0.5

1.0

mA

Angle of half sensitivity

ϕ

± 12

deg

Wavelength of peak sensitivity

λ

p

825

nm

Range of spectral bandwidth

λ

0.1

450 to 1040

nm

Collector emitter saturation voltage

Ee = 1 mW/cm2, λ = 950 nm,

IC = 0.1 mA

VCEsat

0.3

V

Turn-on time

VS = 5 V, IC = 5 mA, RL = 100 Ω

ton

4.8

µs

Turn-off time

VS = 5 V, IC = 5 mA, RL = 100 Ω

toff

5.0

µs

Cut-off frequency

VS = 5 V, IC = 5 mA, RL = 100 Ω

fc

120

kHz

94 8235

20

100

40

60

80

T

amb - Ambient Temperature (°C)

100

101

102

103

104

V

CE = 20 V

0

0.6

0.8

1.0

1.2

1.4

2.0

20

40

60

80

100

1.6

1.8

λ

94 8239

T

amb - Ambient Temperature (°C)

V

CE = 5 V

E

e = 1 mW/cm

2

= 950 nm

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