FEP(F,B)6AT thru FEP(F,B)6DT

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88598

Revision: 07-Nov-07

2

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Note:

(1) Automotive grade AEC Q101 qualified

PARAMETER

TEST CONDITIONS

SYMBOL

FEP6AT

FEP6BT

FEP6CT

FEP6DT

UNIT

Maximum instantaneous forward voltage

3.0 A

0.975

V

Maximum DC reverse current at rated DC

blocking voltage per diode

5.0

50

µA

Maximum reverse recovery time per diode

35

ns

Typical junction capacitance per diode

4.0 V, 1 MHz

28

pF

PARAMETER

SYMBOL

FEP6

FEPF6

FEPB6

UNIT

Typical thermal resistance from junction to case per diode

3.6

5.1

3.6

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

FEP6DT-E3/45

1.81

45

50/tube

Tube

ITO-220AB

FEPF6DT-E3/45

1.97

45

50/tube

Tube

TO-263AB

FEPB6DT-E3/45

1.33

45

50/tube

Tube

TO-263AB

FEPB6DT-E3/81

1.33

81

800/reel

Tape and reel

TO-220AB

1.81

45

50/tube

Tube

ITO-220AB

1.97

45

50/tube

Tube

TO-263AB

1.33

45

50/tube

Tube

TO-263AB

1.33

81

800/reel

Tape and reel