SI5905BDC-T1-E3 datasheet(4/7 Pages) VISHAY

Part #	SI5905BDC-T1-E3

Description	Dual P-Channel 8-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74650

S-71343-Rev. A, 09-Jul-07

Vishay Siliconix

Si5905BDC

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Forward Diode Voltage vs. Temp

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

10

1

TJ = 25 °C

TJ = 150 °C

TJ - Temperature (°C)

0.3

0.4

0.5

0.6

0.7

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

VGS - Gate-to-Source Voltage (V)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TA = 125 °C

TA = 25 °C

ID = 3.3 A

0.001

0

1

50

10

30

10

0.01

Time (sec)

20

40

0.1

100

1000

0.0001

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

*VGS

minimum VGS at which rDS(on) isspecified

10

0.1

1

10

1

TA = 25 °C

Single Pulse

1 ms

10 ms

0.01

*Limited

by rDS(on)

1 s

10 s

dc

BVDSS Limited

0.01

100 ms

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SI5905BDC-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

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