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SI5905BDC-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI5905BDC-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74650 S-71343-Rev. A, 09-Jul-07 Vishay Siliconix Si5905BDC New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage vs. Temp Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 10 1 TJ = 25 °C TJ = 150 °C TJ - Temperature (°C) 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS - Gate-to-Source Voltage (V) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TA = 125 °C TA = 25 °C ID = 3.3 A 0.001 0 1 50 10 30 10 0.01 Time (sec) 20 40 0.1 100 1000 0.0001 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) isspecified 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1 ms 10 ms 0.01 *Limited by rDS(on) 1 s 10 s dc BVDSS Limited 0.01 100 ms |
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