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SI5920DC-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI5920DC-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si5920DC New Product Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 1 Dual N-Channel 1.5-V (G-S) MOSFET FEATURES • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra -low on-resistance in compact, thermally enhanced ChipFET® package APPLICATIONS • Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Qg (Typ) 8 0.032 at VGS = 4.5 V 4a 7.3 nC 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free) Marking Code XXX Lot Traceability and Date Code Part # Code CD 1206-8 ChipFET ® (Dual) Bottom View S1 G1 S2 G2 D1 D1 D2 D2 1 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS ± 5 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4a A TC = 70 °C 4a TA = 25 °C 4a TA = 70 °C 4a Pulsed Drain Current IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 2.6 TA = 25 °C 1.7c Maximum Power Dissipation TC = 25 °C PD 3.12 W TC = 70 °C 2.0 TA = 25 °C 2.04b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 sec RthJA 50 60 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 RoHS COMPLIANT |
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