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TCET1101G Datasheet(PDF) 6 Page - Vishay Siliconix |
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TCET1101G Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 10 page Document Number: 83503 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 2.2, 16-May-08 815 TCET1100/TCET1100G Optocoupler, Phototransistor Output, High Temperarure Vishay Semiconductors Fig. 5 - Switching Times TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature t p t t 0 0 10 % 90 % 100 % tr td ton ts tf toff IF IC 96 11698 tp Pulse duration td Delay time tr Rise time ton (= t + t ) d r Turn-on time ts Storage time t f Fall time toff (= ts + tf)Turn-off time 0 50 100 150 200 250 300 040 80 120 T amb - Ambient Temperature (°C) 96 11700 Coupled device Phototransistor IR-diode 0.1 1 10 100 1000 0 V F - Forward Voltage (V) 96 11862 1.6 0.2 1.4 1.2 1.0 0.8 0.6 0.4 2.0 1.8 - 25 0 25 50 0 0.5 1.0 1.5 2.0 95 11025 75 T amb - Ambient Temperature (°C) V CE = 5 V I F = 5 mA 025 50 75 1 10 100 1000 10 000 100 95 11026 V CE = 20 V I F = 0 T amb - Ambient Temperature (°C) |
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