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BAS16WS-V-GS18 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS16WS-V-GS18 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85752 Rev. 1.7, 30-Apr-08 BAS16WS-V Vishay Semiconductors For technical support, please contact: Diodes-SSP@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage IF = 1 mA VF 715 mV IF = 10 mA VF 855 mV IF = 50 mA VF 1000 mV IF = 150 mA VF 1250 mV Leakage current VR = 25 V, TJ = 150 °C IR 30 µA VR = 75 V IR 1µA VR = 75 V, TJ = 150 °C IR 50 µA Diode capacitance VR = 0; f = 1 MHz CD 2pF Reverse recovery time IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 6ns Figure 1. Forward Characteristics Figure 2. Dynamic Forward Resistance vs. Forward Current 18105 VF (V) T j = 100 °C T j = 25 °C 10- 2 10- 1 102 103 1 10 12 0 17438 f = 1 kHz T j = 25 °C IF (mA) 10 102 103 104 10-2 10-1 1102 10 2 5 2 5 2 5 2 5 Figure 3. Admissible Power Dissipation vs. Ambient Temperature Figure 4. Relative Capacitance vs. Reverse Voltage 18185 Tamb (°C) 0 100 400 500 200 300 100 200 0 17440 VR (V) 0.7 0.8 0.9 1.0 1.1 f = 1 MHz T j = 25 °C 2 0 8 6 410 |
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