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HFA60FA120P Datasheet(PDF) 1 Page - Vishay Siliconix |
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HFA60FA120P Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 94609 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 16-Oct-08 1 HEXFRED® Ultrafast Soft Recovery Diode, 60 A HFA60FA120P Vishay High Power Products FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL pending • Totally lead (Pb)-free • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS The dual diode series configuration (HFA60FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. PRODUCT SUMMARY VR 1200 V VF (typical) 2.2 V trr (typical) 123 ns IF(DC) at TC 30 A at 110 °C SOT-227 1 4 2 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage VR 1200 V Continuous forward current IF TC = 110 °C 30 A Single pulse forward current IFSM TJ = 25 °C 350 Maximum repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 60 °C 110 Maximum power dissipation PD TC = 25 °C 216 W TC = 100 °C 86 RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500 V Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage VBR IR = 100 µA 1200 - - V Forward voltage VFM IF = 30 A - 2.2 3.0 IF = 60 A - 2.7 3.8 IF = 60 A, TJ = 150 °C - 3.4 - Reverse leakage current IRM VR = VR rated - 1.0 75 µA TJ = 150 °C, VR = VR rated - 2.7 10 mA |
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