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VO3052 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VO3052 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Document Number: 83749 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.6, 23-Oct-08 923 VO3052, VO3053 Optocoupler, Non Zero Crossing Phototriac, 1.5 kV/µs dV/dt, 600 V Vishay Semiconductors Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Fig. 1 - On-State Current (RMS) vs. Temperature Note The allowable load current was calculated out under a given operating conditions and only for reference: LED power: QE = 0.015 W, RBA (2-layer) = 72 °C/W Note The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. COUPLER Isolation test voltage t = 1.0 s VISO 5300 VRMS Total power dissipation Ptot 300 mW Operating temperature Tamb - 40 to + 100 °C Storage temperature Tstg - 55 to + 150 °C Soldering temperature (2) 10 s Tsld 260 °C THERMAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum LED junction temperature Tjmax 125 °C Maximum output die junction temperature Tjmax 125 °C Thermal resistance, junction emitter to board θ JEB 150 °C/W Thermal resistance, junction emitter to case θ JEC 139 °C/W Thermal resistance, junction detector to board θ JDB 78 °C/W Thermal resistance, junction detector to case θ JDC 103 °C/W Thermal resistance, junction emitter to junction detector θ JED 496 °C/W Thermal resistance, case to ambient θ CA 3563 °C/W ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 0 20 40 60 80 100 120 - 40 - 20 0 20 40 60 80100 I F = 10 mA 21353 Temperature (°C) |
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Similar Description - VO3052_08 |
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