VO3062 datasheet(3/7 Pages) VISHAY

Part #	VO3062

Description	Phototriac, Zero Crossing, 1.5 kV/µs dV/dt, 600 V

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 83748

For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com

Rev. 1.6, 23-Oct-08

929

VO3062, VO3063

Phototriac, Zero Crossing,

1.5 kV/µs dV/dt, 600 V

Vishay Semiconductors

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

19996

Package

ELECTRICAL CHARACTERISTCS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Reverse current

VR = 6 V

IR

10

µA

Forward voltage

IF = 30 mA

VF

1.2

1.5

V

OUTPUT

Leakage with LED off, either direction

VDRM = 600 V

IDRM

10

500

nA

Critical rate of rise off-state voltage

VD = 400 V

dV/dt

1500

2000

V/µs

COUPLER

LED trigger current,

current required to latch output

VO3063

IFT

5mA

VO3062

IFT

10

mA

Peak on-state voltage,

either direction

ITM = 100 mA Peak,

IF = Rated IFT

VTM

1.7

3

V

Holding current, either direction

IH

200

µA

Inhibit voltage (MT1-MT2 voltage

above which device will not trigger)

VINH

12

22

V

Leakage in inhibited state

IF = 10 mA maximum,

at rated VDRM, off state

VDRM2

250

1000

µA

SAFETY AND INSULATION RATINGS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Climatic classification

IEC 68 part 1

40/85/21

Pollution degree

DIN VDE 0109

2

Comparative tracking index per DIN IEC 112/VDE 0303 part 1,

group IIIa per DIN VDE 6110 175 399

CTI

175

Highest allowable overvoltage

Transient

overvoltage

VIOTM

8000

Vpeak

Maximum working insulation voltage

Recurring peak

voltage

VIORM

890

Vpeak

Insulation resistance at 25 °C

VIO = 500 V

RIS

≥ 1012

Ω

Insulation resistance at TS

VIO = 500 V

RIS

≥ 109

Ω

Insulation resistance at 100 °C

VIO = 500 V

RIS

≥ 1011

Ω

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