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SB3H90 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SB3H90
Description  High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SB3H90 Datasheet(HTML) 1 Page - Vishay Siliconix

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New Product
SB3H90 & SB3H100
Vishay General Semiconductor
Document Number: 88720
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
middle
voltage
high
frequency
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 µA
TJ max.
175 °C
DO-201AD
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dV/dt
10 000
V/µs
Storage temperature range
TSTG
- 55 to + 175
°C
Maximum operating junction temperature
TJ
175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB3H90
SB3H100
UNIT
Maximum instantaneous forward
voltage (1)
IF = 3.0 A
IF = 3.0 A
TJ = 25 °C
TJ = 125 °C
VF
0.80
0.65
V
Maximum reverse current
at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
20
4.0
µA
mA


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