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SD241P Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SD241P
Description  Dual Common-Cathode Schottky Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SD241P Datasheet(HTML) 1 Page - Vishay Siliconix

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SD241P
Vishay General Semiconductor
Document Number: 88738
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
45 V
IFSM
400 A
VF
0.47 V
TJ max.
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SD241P
UNIT
Maximum repetitive peak reverse voltage at TC = 25 °C
VRRM
45
V
Maximum blocking voltage at TC = 25 °C
VDC
45
V
Maximum working peak reverse voltage
VRWM
35
V
Maximum average forward rectified current at TC = 105 °C
IF(AV)
30
A
Peak forward surge current, 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
400
A
Peak repetitive reverse surge current per diode (1)
IRSM
2.0
A
Voltage rate of change at VR = 35 V
dV/dt
10 000
V/µs
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SD241P
UNIT
Maximum instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
TC = 125 °C
TC = 125 °C
VF
0.47
0.60
V
Maximum instantaneous reverse current reverse
voltage per diode (1)
VR = 35 V
TC = 25 °C
TC = 125 °C
IR
1.0
100
mA


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