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M62006L Datasheet(PDF) 3 Page - Renesas Technology Corp |
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M62006L Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 10 page  M62001L/FP to M62008L/FP Rev.1.00 Sep 14, 2005 page 3 of 9 Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Item Symbol Ratings Unit Conditions Supply voltage VCC 8 V Output sink current Isink 5 mA Power dissipation Pd 440 mW Thermal derating K θ 4.4 mW/°C Ta ≥ 25°C Operating temperature Topr –20 to +75 °C Storage temperature Tstg –40 to +125 °C Electrical Characteristics (Ta = 25°C, unless otherwise noted) Item Symbol Min Typ Max Unit Test Conditions 4.30 4.45 4.60 M62001, M62002, M62005, M62006, Supply voltage VS 4.05 4.25 4.45 Interruption level during VCC drop (Equivalent to VSL) M62003, M62004, M62007, M62008, Battery voltage VBATT 2.00 2.15 2.30 V Reset level at backup Hysteresis voltage ∆V S — 100 — mV ∆V S = VSH – VSL — 5.0 20 VCC = 5.0V: in normal mode Circuit current ICC — 1.0 4 µA VCC = 2.5V: in backup mode Sink ability Vsat1 — 0.2 0.4 VCC = 4V, IO = 4mA (Output saturation voltage of N-ch transistor) Source ability Vsat2 — 0.2 0.4 V VCC = 4V, IO = 1mA (Output saturation voltage of P-ch transistor) [CMOS output] M62001, M62003, M62005, M62007 Delay time td — 50 — ms External capacitance Cd = 0.33 µF Pulse width tpw — 7 10 µs Output pulse width (M62001, M62002, M62003, M62004) Reset output response time tRESET — 30 — µs Time between VCC (when falling) = VBATT and output of RESET signal Interruption output reset time tINT — 100 — µs Time between VCC (when falling) = VS and output of INT signal Summary of M62001L/FP to M62008L/FP Type No. Supply Voltage Detection Level VS (V) Battery Voltage Detection Level VBATT (V) Output Form Interruption Signal Output Mode M62001L/FP CMOS M62002L/FP 4.45 Open drain M62003L/FP CMOS M62004L/FP 4.25 Open drain Pulse output M62005L/FP CMOS M62006L/FP 4.45 Open drain M62007L/FP CMOS M62008L/FP 4.25 2.15 Open drain Hold output |
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