Document Number: 93169

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Revision: 14-May-08

7

SD1553C..K Series

Fast Recovery Diodes

(Hockey PUK Version),

1650/1825 A

Vishay High Power Products

Fig. 22 - Recovery Time Characteristics

Fig. 23 - Recovery Charge Characteristics

Fig. 24 - Recovery Current Characteristics

Fig. 25 - Recovery Time Characteristics

Fig. 26 - Recovery Charge Characteristics

Fig. 27 - Recovery Current Characteristics

2.5

3

3.5

4

4.5

5

5.5

6

6.5

7

7.5

10

1 0 0

1 000

Ra te Of F a ll Of F o rw a rd C urre nt - d i/d t (A /µs )

50 0 A

I

= 1500 A

Sin e Puls e

1000 A

FM

SD 1 553C ..S 20K S e ries

T = 1 5 0 °C ; V

> 100V

r

J

0

20 0

40 0

60 0

80 0

10 00

12 00

14 00

05 0

1 0 0 1 5 0 2 0 0 2 5 0 3 0 0

Ra te O f Fall O f Fo rw ard C urre nt - di/d t (A /µs)

500 A

I

= 15 00 A

Sine Puls e

10 00 A

FM

S D 155 3 C ..S20K Se rie s

T = 150 °C ; V

> 100V

J

r

0

10 0

20 0

30 0

40 0

50 0

60 0

70 0

0

5 0

1 0 0 15 0 2 00 250 3 00

Ra te Of F a ll Of F o rw a rd Cu rrent - d i/d t (A/µs )

I

= 1 500 A

Sine Pulse

10 00 A

500 A

FM

SD 155 3 C ..S20K Se rie s

T = 1 5 0 ° C ; V

> 100V

J

r

3.5

4

4.5

5

5.5

6

6.5

7

7.5

8

8.5

10

10 0

1 000

Ra te Of F a ll O f F o rw a rd C urrent - d i/d t ( A/µs )

500 A

I

= 150 0 A

Sine Pulse

100 0 A

FM

S D 1553C ..S 30K S e ries

T = 1 5 0 °C ; V

> 1 0 0 V

r

J

0

20 0

40 0

60 0

80 0

10 00

12 00

14 00

16 00

05 0

1 0 0 1 5 0 2 0 0 2 5 0 3 0 0

Ra te O f Fall O f Fo rw ard C urre nt - di/d t (A /µs)

500 A

I

= 150 0 A

Sine Pu ls e

10 00 A

FM

SD 1553C ..S3 0K S e ries

T = 1 5 0 ° C ; V

> 1 0 0 V

J

r

0

10 0

20 0

30 0

40 0

50 0

60 0

70 0

0

5 0

1 0 0 15 0 2 00 25 0 3 0 0

500 A

Ra te O f Fa ll O f Fo rwa rd C urren t - d i/d t (A/µs )

I

= 1 50 0 A

Sine Puls e

1000 A

FM

SD 1 5 5 3 C ..S3 0 K Se rie s

T = 150 ° C ; V

> 100V

J

r