SUD40N02-3M3P datasheet(1/7 Pages) VISHAY

Part #	SUD40N02-3M3P

Description	N-Channel 20-V (D-S), 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUD40N02-3m3P

New Product

Document Number: 69819

S-80260-Rev. A, 04-Feb-08

www.vishay.com

1

N-Channel 20-V (D-S), 175 °C MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

APPLICATIONS

•

Server

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

Qg (Typ)

20

0.0033 at VGS = 10 V

40

30 nC

0.0044 at VGS = 4.5 V

40

TO-252

S

GD

Top View

Drain Connected to Tab

Order Number:

SUD40N02-3m3P-E3 (Lead (Pb)-free)

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

40a

A

TC = 100 °C

40a

TA = 25 °C

24.4b

TA = 100 °C

17.2b

Pulsed Drain Current

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

40a

TA = 25 °C

2.8b

Maximum Power Dissipation

TC = 25 °C

PD

79

W

TC = 100 °C

39.5

TA = 25 °C

3.3b

TA = 100 °C

1.6b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb

Steady State

RthJA

37

45

°C/W

Maximum Junction-to-Case

Steady State

RthJC

1.5

1.9

RoHS

COMPLIANT

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