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SQ7415EN-T1 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SQ7415EN-T1 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 74488 4 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.7 A TJ - Junction Temperature (°C) 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 VGS - Gate-to-Source Voltage (V) ID = 5.7 A VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 20 10 1 40 44 48 52 56 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Graph to be available upon completion of testing |
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