SUM75N15-18P-E3 datasheet(4/6 Pages) VISHAY

Part #	SUM75N15-18P-E3

Description	N-Channel 150-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69995

S-82349-Rev. B, 22-Sep-08

Vishay Siliconix

SUM75N15-18P

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Gate Charge

Threshold Voltage

Source-Drain Diode Forward Voltage

0

2

4

6

8

10

020

40

60

80

ID = 85A

Qg - Total Gate Charge (nC)

VDS =75 V

VDS =120 V

TJ - Temperature (°C)

- 1.6

- 1.0

- 0.4

0.2

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

ID =1mA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

On-Resistance vs. Junction Temperature

Drain-Source Breakdown vs. Junction Temperature

Safe Operating Area, Junction-to-Case

TJ -Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

ID =20A

VGS =10 V

TJ - Temperature (°C)

140

150

160

170

180

190

- 50

- 25

0

25

50

75

100

125

150

ID =1mA

0.01

0.1

1

10

100

1000

0.1

1.0

10

100

1000

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

100 µs

TC = 25 °C

Single Pulse

Limited byRDS(on)*

10 µs

100 ms, DC

10 ms

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