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SUM90N08-4M8P-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUM90N08-4M8P-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 74458 S-71663-Rev. C, 06-Aug-07 Vishay Siliconix SUM90N08-4m8P Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 75 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 1 µA VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 70 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A 0.004 0.0048 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0096 VGS = 8 V, ID = 20 A, TJ = 150 °C 0.0106 VGS = 8 V, ID = 20 A 0.0046 0.006 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 58 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 40 V, f = 1 MHz 6460 pF Output Capacitance Coss 571 Reverse Transfer Capacitance Crss 275 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 85 A 105 160 nC Gate-Source Chargec Qgs 32 Gate-Drain Chargec Qgd 28 Gate Resistance Rg f = 1 MHz 1.3 2.6 Ω Turn-On Delay Timec td(on) VDD = 30 V, RL = 0.4 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω 23 35 ns Rise Timec tr 17 26 Turn-Off Delay Timec td(off) 34 52 Fall Timec tf 815 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) b Continuous Current IS 85 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.85 1.5 V Reverse Recovery Time trr IF = 75 A, di/dt = 100 A/µs 68 100 ns Peak Reverse Recovery Current IRM(REC) 2.6 4 A Reverse Recovery Charge Qrr 88 132 µC |
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