SUM90N08-4M8P-E3 datasheet(2/6 Pages) VISHAY

Part #	SUM90N08-4M8P-E3

Description	N-Channel 75-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74458

S-71663-Rev. C, 06-Aug-07

Vishay Siliconix

SUM90N08-4m8P

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VDS = 0 V, ID = 250 µA

75

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

24

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 250

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 75 V, VGS = 0 V

1

µA

VDS = 75 V, VGS = 0 V, TJ = 125 °C

50

VDS = 75 V, VGS = 0 V, TJ = 150 °C

250

On-State Drain Currenta

ID(on)

VDS ≥ 10 V, VGS = 10 V

70

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 20 A

0.004

0.0048

Ω

VGS = 10 V, ID = 20 A, TJ = 125 °C

0.0096

VGS = 8 V, ID = 20 A, TJ = 150 °C

0.0106

VGS = 8 V, ID = 20 A

0.0046

0.006

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

58

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = 40 V, f = 1 MHz

6460

pF

Output Capacitance

Coss

571

Reverse Transfer Capacitance

Crss

275

Total Gate Chargec

Qg

VDS = 30 V, VGS = 10 V, ID = 85 A

105

160

nC

Gate-Source Chargec

Qgs

32

Gate-Drain Chargec

Qgd

28

Gate Resistance

Rg

f = 1 MHz

1.3

2.6

Ω

Turn-On Delay Timec

td(on)

VDD = 30 V, RL = 0.4 Ω

ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω

23

35

ns

Rise Timec

tr

17

26

Turn-Off Delay Timec

td(off)

34

52

Fall Timec

tf

815

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)

b

Continuous Current

IS

85

A

Pulsed Current

ISM

240

Forward Voltagea

VSD

IF = 30 A, VGS = 0 V

0.85

1.5

V

Reverse Recovery Time

trr

IF = 75 A, di/dt = 100 A/µs

68

100

ns

Peak Reverse Recovery Current

IRM(REC)

2.6

4

A

Reverse Recovery Charge

Qrr

88

132

µC

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