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SUM110N04-2M1P Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUM110N04-2M1P Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Vishay Siliconix SUM110N04-2m1P New Product Document Number: 69983 S-80680-Rev. A, 31-Mar-08 www.vishay.com 1 N-Channel 40-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a, c Qg (Typ.) 40 0.0021 at VGS = 10 V 110 240 nC 0.0024 at VGS = 4.5 V 110 Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) TO-263 S D G Top View N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 110a, c A TC = 70 °C 110c TA = 25 °C 29b TA = 70 °C 23b Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 80 Single Pulse Avalanche Energy EAS 320 V Continuous Source-Drain Diode Current TC = 25 °C IS 110a, c A TA = 25 °C 2.6b Maximum Power Dissipation TC = 25 °C PD 312a W TC = 70 °C 200 TA = 25 °C 3.13b TA = 70 °C 2.0b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Steady State RthJA 32 40 °C/W Maximum Junction-to-Case Steady State RthJC 0.33 0.4 RoHS COMPLIANT |
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