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V8P10 Datasheet(PDF) 1 Page - Vishay Siliconix |
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V8P10 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product V8P10 Vishay General Semiconductor Document Number: 89005 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 100 V IFSM 150 A EAS 100 mJ VF at IF = 8 A 0.582 V TJ max. 150 °C TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 TMBS ® eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V8P10 UNIT Device marking code V810 Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (Fig. 1) IF(AV) 8.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 100 mJ Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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