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Document Number: 69935

S-80181-Rev. A, 04-Feb-08

Vishay Siliconix

SUP90N15-18P

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

150

V

Gate Threshold Voltage

2.5

4.5

Gate-Body Leakage

± 250

nA

Zero Gate Voltage Drain Current

1

µA

50

250

120

A

0.0145

0.018

Ω

0.029

0.036

55

S

Input Capacitance

4180

pF

Output Capacitance

235

Reverse Transfer Capacitance

83

64

100

nC

23

16

Gate Resistance

f = 1 MHz

2.1

4.2

Ω

15

25

ns

10

15

25

40

815

b

Continuous Current

90

A

Pulsed Current

180

1.0

1.5

V

Reverse Recovery Time

130

200

ns

Peak Reverse Recovery Current

812

A

Reverse Recovery Charge

0.52

1.2

µC