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SUP90N15-18P-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUP90N15-18P-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 69935 S-80181-Rev. A, 04-Feb-08 Vishay Siliconix SUP90N15-18P Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 4.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V 1 µA VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 VDS = 150 V, VGS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 120 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A 0.0145 0.018 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 0.029 0.036 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 55 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 75 V, f = 1 MHz 4180 pF Output Capacitance Coss 235 Reverse Transfer Capacitance Crss 83 Total Gate Chargec Qg VDS = 75 V, VGS = 10 V, ID = 85 A 64 100 nC Gate-Source Chargec Qgs 23 Gate-Drain Chargec Qgd 16 Gate Resistance Rg f = 1 MHz 2.1 4.2 Ω Turn-On Delay Timec td(on) VDD = 75 V, RL = 0.88 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω 15 25 ns Rise Timec tr 10 15 Turn-Off Delay Timec td(off) 25 40 Fall Timec tf 815 Source-Drain Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 90 A Pulsed Current ISM 180 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/µs 130 200 ns Peak Reverse Recovery Current IRM(REC) 812 A Reverse Recovery Charge Qrr 0.52 1.2 µC |
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