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TDE1891 Datasheet(PDF) 5 Page - STMicroelectronics |
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TDE1891 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 1J (at Tj =85 °C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl L RL [Io – Vcl –Vs RL log 1 + Vs Vcl –Vs ] Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO =ILOAD 3) In normal conditions the operating Junction temperature should remain below 125 °C. If the demagnetization energy exceeds the rated value, an external clamp between output and +VS must be externally connected (see fig. 5). The external zener will be chosen with Vzener value lower than the internal Vcl minimum rated value and significantly (at least 10V) higher than the voltage that is externally supplied to pin 10, i.e. than the supply voltage. Alternative circuit solutions can be implemented to divert the demagnetization stress from the TDE1890/1, if it exceeds 1J. In all cases it is rec- ommended that at least 10V are available to de- magnetize the load in the turn-off phase. A clamping circuit connected between ground and the output pin is not recommended. An interrup- tion of the connection between the ground of the load and the ground of the TDE1890/1 would leave the TDE1890/1 alone to absorb the full amount of the demagnetization energy. Figure 2: Inductive Load Equivalent Circuit TDE1890 - TDE1891 5/12 |
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