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IMBD4448-V Datasheet(PDF) 2 Page - Vishay Siliconix

Part # IMBD4448-V
Description  Small Signal Switching Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IMBD4448-V Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85732
Rev. 1.4, 07-Apr-05
IMBD4448-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout (SOT-23).
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
4501)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 5 mA
VF
0.62
0.72
V
IF = 100 mA
VF
1.0
V
Leakage current
VR = 70 V
IR
2.5
µA
VR = 70 V, Tj = 150 °C
IR
50
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
Diode capacitance
VF = VR = 0
Ctot
4pF
Reverse recovery time
(see figures)
IF = 10 mA, IR = 10 mA,
VR = 6 V, RL = 100 Ω
trr
4ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)


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