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S594TR Datasheet(PDF) 4 Page - Vishay Siliconix |
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S594TR Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number 85048 Rev. 1.6, 08-Sep-08 S594T / S594TR / S594TRW Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Drain Current vs. Drain Source Voltage Figure 3. Drain Current vs. Gate 2 Source Voltage 0 25 50 75 100 0 50 100 150 200 250 Tamb – Ambient Temperature ( °C) 150 95 10765 125 VG2S=4V 01 2 3 0 4 8 12 16 20 VDS – Drain Source Voltage(V) 5 95 10766 4 2V 1V 3V 01 2 3 4 0 4 8 12 16 20 VG2S – Gate 2 Source Voltage(V) 95 10767 VDS =5V Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage Figure 6. Output Capacitance vs. Drain Source Voltage 0 10 20 30 40 95 10768 01 2 3 4 VG2S – Gate 2 Source Voltage(V) VDS =5V f = 200 MHz 95 10769 0 1 2 3 4 01 2 3 4 VG2S – Gate 2 Source Voltage(V) 6 5 VDS =5V f = 200 MHz 34 5 6 0 0.5 1 1.5 2 VDS – Drain Source Voltage(V) 7 9511143 VG2S =4V f = 200 MHz |
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