S949TR datasheet(2/10 Pages) VISHAY

Part #	S949TR

Description	MOSMIC® for TV-Tuner Prestage with 9 V Supply Voltage

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85061

Rev. 1.5, 08-Sep-08

S949T / S949TR / S949TRW

Vishay Semiconductors

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35

μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Caution for Gate 1 switch-off mode:

No external DC-voltage on Gate 1 in active mode!

Switch-off at Gate 1 with VG1S < 0.7 V is feasible.

Using open collector switching transistor (inside of PLL), insert 10 k

Ω collector resistor.

Part

Marking

Package

S949T

949

SOT-143

S949TR

99R

SOT-143R

S949TRW

W99

SOT-343R

Parameter

Test condition

Symbol

Value

Unit

Drain - source voltage

VDS

12

V

Drain current

ID

30

mA

Gate 1/Gate 2 - source peak

current

± IG1/G2SM

10

mA

Gate 1/Gate 2 - source voltage

± VG1/G2SM

6V

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Channel ambient

1)

RthChA

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Gate 1 - source breakdown

voltage

± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS

710

V

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS

710

V

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0

+ IG1SS

50

μA

- VG1S = 5 V, VG2S = VDS = 0

- IG1SS

100

μA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

20

nA

Drain current

VDS = 9 V, VG1S = 0, VG2S = 4 V

IDSS

50

500

μA

Self-biased operating current

VDS = 9 V, VG1S = nc, VG2S = 4 V

IDSP

812

16

mA

Gate 2 - source cut-off voltage

VDS = 9 V, VG1S = nc,

ID = 100 μA

VG2S(OFF)

1.0

V

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