New Product

MBR(F,B)15H35CT thru MBR(F,B)15H60CT

Vishay General Semiconductor

Document Number: 88782

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

7.5 A x 2

35 V to 60 V

150 A

0.55 V, 0.61 V

50 µA

175 °C

TO-263AB

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR15HxxCT

ITO-220AB

MBRB15HxxCT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

MBRF15HxxCT

PIN 2

PIN 1

PIN 3

1

2

3

PARAMETER

SYMBOL

MBR15H35CT

MBR15H45CT

MBR15H50CT

MBR15H60CT UNIT

Maximum repetitive peak reverse voltage

35

45

50

60

V

Working peak reverse voltage

35

45

50

60

V

Maximum DC blocking voltage

35

45

50

60

V

Max. average forward rectified current

(Fig. 1)

total device

per diode

15

7.5

A

Non-repetitive avalanche energy per diode

80

mJ

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

150

A

Peak repetitive reverse surge current per diode

1.0

0.5

A

Peak non-repetitive reverse energy

(8/20 µs waveform)

20

10

mJ