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MBR15H45CT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR15H45CT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product MBR(F,B)15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor Document Number: 88782 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 7.5 A x 2 VRRM 35 V to 60 V IFSM 150 A VF 0.55 V, 0.61 V IR 50 µA TJ max. 175 °C TO-263AB CASE PIN 2 PIN 1 PIN 3 TO-220AB MBR15HxxCT ITO-220AB MBRB15HxxCT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K MBRF15HxxCT PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Max. average forward rectified current (Fig. 1) total device per diode IF(AV) 15 7.5 A Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse surge current per diode at tp = 2.0 µs, 1 kHz IRRM 1.0 0.5 A Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 20 10 mJ |
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