New Product

MSS1P3 & MSS1P4

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89019

Revision: 04-Aug-08

2

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

Note:

(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Maximum instantaneous

0.41

0.48

-

0.55

V

0.32

0.41

-

0.46

8.5

4.5

200

15

µA

mA

Typical junction capacitance

4.0 V, 1 MHz

50

-

pF

PARAMETER

SYMBOL

MSS1P3

MSS1P4

UNIT

125

30

40

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

MSS1P4-E3/89A

0.006

89A

4500

7" diameter plastic tape and reel

MSS1P4-M3/89A

0.006

89A

4500

7" diameter plastic tape and reel

Figure 1. Maximum Forward Current Derating Curve

Lead Temperature (°C)

0

0

0.2

0.4

0.6

0.8

1.0

1.2

25

50

75

100

125

150

Resistive or Inductive Load

T

at the Cathode Band Terminal

Figure 2. Forward Power Loss Characteristics

0.5

0.6

0.4

0.3

0.2

0.1

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

D = t

t

p

T