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MBRB2090CT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBRB2090CT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor Document Number: 89033 Revision: 26-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A x 2 VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C CASE PIN 2 PIN 1 PIN 3 TO-220AB MBR2090CT MBR20100CT MBRB2090CT MBRB20100CT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K PIN 2 PIN 1 PIN 3 MBRF2090CT MBRF20100CT ITO-220AB TMBS ® TO-263AB 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR2090CT MBR20100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 °C total device per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min VAC 1500 V |
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