New Product

MBR(F,B)2090CT & MBR(F,B)20100CT

Vishay General Semiconductor

Document Number: 89033

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

10 A x 2

90 V, 100 V

150 A

0.65 V

150 °C

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR2090CT

MBR20100CT

MBRB2090CT

MBRB20100CT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

PIN 2

PIN 1

PIN 3

MBRF2090CT

MBRF20100CT

ITO-220AB

TMBS

®

TO-263AB

1

2

3

PARAMETER

SYMBOL

MBR2090CT

MBR20100CT

UNIT

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

total device

per diode

20

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

150

A

0.5

A

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 65 to + 150

°C

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

1500

V