HVV0405-175-EK datasheet(2/5 Pages) HVVI

Part #	HVV0405-175-EK

Description	UHF Pulsed Power Transistor 400-500 MHz, 300關s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications

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Manufacturer	HVVI [HVVi Semiconductors, Inc.]

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HVV0405-175 HigH Voltage, HigH Ruggedness

UHF Pulsed Power Transistor

400-500 MHz, 300μs Pulse, 10% Duty Cycle

For UHF band, Weather and Long Range Radar Applications

The innovative Semiconductor Company!

HVVi Semiconductors, Inc.

10235 S. 51st St. Suite 100

Phoenix, AZ. 85044

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

EG-01-DS10A

12/11/08

2

eleCtRiCal CHaRaCteRistiCs

Pulse CHaRaCteRistiCs

tHeRMal CHaRaCteRistiCs

Ruggedness PeRFoRManCe

HVVi Semiconductors, Inc.

ISO 9001:2000 Certified

EG-01-DS10A

10235 S. 51st St. Suite 100

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

12/12/08

Phoenix, Az. 85044

2

HVV0405-175 High Voltage, High Ruggedness

UHF Pulsed Power Transistor

400-500 MHz, 300µs Pulse, 10% Duty Cycle

For UHF band, Weather and Long Range Radar Applications

% Duty

The HVV0405-175 device is capable of withstanding an output load mismatch

corresponding to a 20:1 VSWR at rated output power and nominal operating voltage

across the frequency band of operation.

1.) NOTE: All parameters measured under pulsed conditions at 175W output power

measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10%

and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.

2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.

Symbol

Parameter

Conditions

Min

Typical

Max

Unit

VBR(DSS)

Drain-Source Breakdown

VGS=0V,ID=5mA

95

102

-

V

IDSS

Drain Leakage Current

VGS=0V,VDS=48V

-

50

200

µA

IGSS

Gate Leakage Current

VGS=5V,VDS=0V

-

1

5

µA

GP1

Power Gain

F=450MHz

23

25

-

dB

IRL1

Input Return Loss

F=450MHz

-

-7

-4

dB

ηD1

Drain Efficiency

F=450MHz

52

55

-

%

VGS(Q)2

Gate Quiescent Voltage

VDD=50V,IDQ=50mA

1.1

1.45

1.8

V

VTH

Threshold Voltage

VDD=5V, ID=300µA

0.7

1.2

1.7

V

Symbol

Parameter

Conditions

Min

Typical

Max

Units

tr1

Rise Time

F=450MHz

-

<25

50

nS

tf1

Fall Time

F=450MHz

-

<22

50

nS

PD1

Pulse Droop

F=450MHz

-

0.3

0.5

dB

Symbol

Parameter

Max

Unit

θJC1

Thermal Resistance

0.40

°C/W

Symbol

Parameter

Test Condition

Max

Units

LMT1

Load

Mismatch

Tolerance

F = 450 MHz

20:1

VSWR

THERMAL PERFORMANCE

PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

RUGGEDNESS PERFORMANCE

HVVi Semiconductors, Inc.

ISO 9001:2000 Certified

EG-01-DS10A

10235 S. 51st St. Suite 100

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

12/12/08

Phoenix, Az. 85044

2

HVV0405-175 High Voltage, High Ruggedness

UHF Pulsed Power Transistor

400-500 MHz, 300µs Pulse, 10% Duty Cycle

For UHF band, Weather and Long Range Radar Applications

% Duty

The HVV0405-175 device is capable of withstanding an output load mismatch

corresponding to a 20:1 VSWR at rated output power and nominal operating voltage

across the frequency band of operation.

1.) NOTE: All parameters measured under pulsed conditions at 175W output power

measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10%

and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.

2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.

Symbol

Parameter

Conditions

Min

Typical

Max

Unit

VBR(DSS)

Drain-Source Breakdown

VGS=0V,ID=5mA

95

102

-

V

IDSS

Drain Leakage Current

VGS=0V,VDS=48V

-

50

200

µA

IGSS

Gate Leakage Current

VGS=5V,VDS=0V

-

1

5

µA

GP1

Power Gain

F=450MHz

23

25

-

dB

IRL1

Input Return Loss

F=450MHz

-

-7

-4

dB

ηD1

Drain Efficiency

F=450MHz

52

55

-

%

VGS(Q)2

Gate Quiescent Voltage

VDD=50V,IDQ=50mA

1.1

1.45

1.8

V

VTH

Threshold Voltage

VDD=5V, ID=300µA

0.7

1.2

1.7

V

Symbol

Parameter

Conditions

Min

Typical

Max

Units

tr1

Rise Time

F=450MHz

-

<25

50

nS

tf1

Fall Time

F=450MHz

-

<22

50

nS

PD1

Pulse Droop

F=450MHz

-

0.3

0.5

dB

Symbol

Parameter

Max

Unit

θJC1

Thermal Resistance

0.40

°C/W

Symbol

Parameter

Test Condition

Max

Units

LMT1

Load

Mismatch

Tolerance

F = 450 MHz

20:1

VSWR

THERMAL PERFORMANCE

PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

RUGGEDNESS PERFORMANCE

The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR

at rated output power and nominal operating voltage across the frequency band of operation.

1

NOTE: All parameters measured under pulsed conditions at 175W output power

measured at the 10% point of the pulse with pulse width = 300μsec, duty cycle = 10%

and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.

2

NOTE: Amount of gate voltage required to attain nominal quiescent current.

Symbol Parameter

Conditions

Min

Typical Max

Unit

VBR(DSS)

Drain-Source Breakdown VGS=0V,ID=5mA

95

102

-

V

IDSS

Drain Leakage Current

VGS=0V,VDS=48V

-

50

200

μA

IGSS

Gate Leakage Current

VGS=5V,VDS=0V

-

1

5

μA

GP1

Power Gain

F=450MHz

23

25

-

dB

IRL1

Input Return Loss

F=450MHz

-

-7

-4

dB

ηD1

Drain Efficiency

F=450MHz

52

55

-

%

VGS(Q)2 Gate Quiescent Voltage

VDD=50V,IDQ=50mA

1.1

1.45

1.8

V

VTH

Threshold Voltage

VDD=5V, ID=300μA

0.7

1.2

1.7

V

Symbol Parameter

Conditions

Min

Typical Max

Unit

Tr1

Rise Time

F=450MHz

-

<25

50

nS

Tf1

Fall Time

F=450MHz

-

<22

50

nS

PD1

Pulse Droop

F=450MHz

-

0.3

0.5

dB

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HVV0405-175-EK Datasheet(PDF) 2 Page - HVVi Semiconductors, Inc.

HVV0405-175-EK Datasheet(HTML) 2 Page - HVVi Semiconductors, Inc.

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