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HVV0405-175-EK Datasheet(PDF) 2 Page - HVVi Semiconductors, Inc. |
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HVV0405-175-EK Datasheet(HTML) 2 Page - HVVi Semiconductors, Inc. |
2 / 5 page TM HVV0405-175 HigH Voltage, HigH Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A 12/11/08 2 eleCtRiCal CHaRaCteRistiCs Pulse CHaRaCteRistiCs tHeRMal CHaRaCteRistiCs Ruggedness PeRFoRManCe HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications % Duty The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=48V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP1 Power Gain F=450MHz 23 25 - dB IRL1 Input Return Loss F=450MHz - -7 -4 dB ηD1 Drain Efficiency F=450MHz 52 55 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr1 Rise Time F=450MHz - <25 50 nS tf1 Fall Time F=450MHz - <22 50 nS PD1 Pulse Droop F=450MHz - 0.3 0.5 dB Symbol Parameter Max Unit θJC1 Thermal Resistance 0.40 °C/W Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 450 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS ELECTRICAL CHARACTERISTICS RUGGEDNESS PERFORMANCE HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10A 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications % Duty The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1.) NOTE: All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=48V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP1 Power Gain F=450MHz 23 25 - dB IRL1 Input Return Loss F=450MHz - -7 -4 dB ηD1 Drain Efficiency F=450MHz 52 55 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Units tr1 Rise Time F=450MHz - <25 50 nS tf1 Fall Time F=450MHz - <22 50 nS PD1 Pulse Droop F=450MHz - 0.3 0.5 dB Symbol Parameter Max Unit θJC1 Thermal Resistance 0.40 °C/W Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance F = 450 MHz 20:1 VSWR THERMAL PERFORMANCE PULSE CHARACTERISTICS ELECTRICAL CHARACTERISTICS RUGGEDNESS PERFORMANCE The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300μsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 2 NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=48V - 50 200 μA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 μA GP1 Power Gain F=450MHz 23 25 - dB IRL1 Input Return Loss F=450MHz - -7 -4 dB ηD1 Drain Efficiency F=450MHz 52 55 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=50mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300μA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr1 Rise Time F=450MHz - <25 50 nS Tf1 Fall Time F=450MHz - <22 50 nS PD1 Pulse Droop F=450MHz - 0.3 0.5 dB |
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