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ST380CH06C1LPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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ST380CH06C1LPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94411 2 Revision: 11-Aug-08 ST380CHPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 960 (440) A 80 (110) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2220 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 12 500 t = 8.3 ms 13 000 t = 10 ms 100 % VRRM reapplied 10 500 t = 8.3 ms 11 000 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 782 kA2s t = 8.3 ms 713 t = 10 ms 100 % VRRM reapplied 553 t = 8.3 ms 505 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 7820 kA2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.85 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.25 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.24 Maximum on-state voltage VTM Ipk = 2900 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.58 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, t r ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA |
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