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Document Number: 94423

6

Revision: 24-Apr-08

VSKU/V105..PbF Series

Vishay High Power Products

Thyristor/Thyristor, 105 A

Fig. 10 - Current Ratings Characteristics

Fig. 11 - Current Ratings Characteristics

Fig. 13 - Gate Characteristics

100

200

300

400

500

600

700

10

20

30

40

50

60

70

80

90 100

100 A

50 A

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

I

= 200 A

TM

20 A

10 A

VSK.105.. Series

T = 125 °C

J

20

40

60

80

100

120

140

10

20

30

40

50

60

70

80

90 100

Rate Of Fall Of Forward Current - di/ dt (A/ µs)

100 A

50 A

I

= 200 A

TM

20 A

10 A

VSK.105.. Series

T = 125 °C

J

0.01

0.1

1

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

VSK.105.. Series

Per Junc tion

Steady State Value:

R

= 0.27 K/ W

(DC Operation)

thJC

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

(b )

(a)

(4)

(3) (2)

(1)

Instantaneous Gate Current (A)

a)Rec ommended load line for

b)Rec ommended load line for

VGD

IGD

Frequenc y Limited by PG(AV)

(1) PGM = 200 W, tp = 300 µs

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2 ms

(4) PGM = 12 W, tp = 5 ms

<= 30%rated di/ dt: 15 V, 40 ohms

tr = 1 µs, tp >= 6 µs

rated di/d t: 20 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

Rec tangular gate pulse

VSK.105.. Series