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SFH615A Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH615A Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number 83671 Rev. 2.0, 06-Sep-06 SFH615A/SFH6156 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage VR 6.0 V DC Forward current IF 60 mA Surge forward current tp ≤ 10 µs IFSM 2.5 A Parameter Test condition Symbol Value Unit Collector-emitter voltage VCE 70 V Emitter-collector voltage VCEO 7.0 V Collector current IC 50 mA tp ≤ 1.0 ms IC 100 mA Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector, refered to climate DIN 40046, part 2, Nov. 74 t = 1.0 s VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Insulation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Soldering temperature max. 10 s, Dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C 0 50 100 150 200 0 25 50 75 100 125 150 18483 Phototransistor Diode Tamb - Ambient Temperature (°C) Figure 1. Permissible Power Dissipation vs. Ambient Temperature |
Similar Part No. - SFH615A_08 |
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Similar Description - SFH615A_08 |
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