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Document Number: 83673

2

Rev. 1.8, 25-Jan-08

SFH618A/SFH6186

Vishay Semiconductors

Optocoupler, Phototransistor Output,

Low Input Current

Notes

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

V

Power dissipation

mW

Forward current

60

mA

OUTPUT

Collector emitter voltage

55

V

Emitter collector voltage

7.0

V

Collector current

50

mA

100

mA

Power dissipation

150

mW

COUPLER

Isolation test voltage between emitter

and detector, refer to Climate

DIN 40046, part 2, Nov. 74

5300

Isolation resistance

Ω

Ω

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

Junction temperature

100

°C

max. 10 s, dip soldering distance

to seating plane

≥ 1.5 mm

260

°C

0

50

100

150

200

0204060

80

100

120

19386

Detector

LED

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.1

1.5

V

Reverse current

0.01

10

µA

Capacitance

25

pF

Thermal resistance

1070

K/W