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BZM55B4V7 Datasheet(PDF) 4 Page - Vishay Siliconix |
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BZM55B4V7 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Figure 3. Temperature Coefficient of Vz vs. Z-Voltage 0 120 160 0 100 300 400 500 600 T amb - Ambient Temperature (°C) 200 95 9602 200 80 40 10 15 20 1 10 100 1000 V Z - Z-Voltage (V) 25 95 9598 T j = 25 °C I Z = 5 mA 0 5 30 - 5 0 5 10 15 V Z - Z-Voltage (V) 50 95 9600 40 I Z = 5 mA 10 20 0 Figure 4. Diode Capacitance vs. Z-Voltage Figure 5. Typical Change of Working Voltage vs. Junction Temperature Figure 6. Forward Current vs. Forward Voltage 10 15 0 50 100 150 200 V Z - Z-Voltage (V) 25 95 9601 20 T j = 25 °C V R = 2 V 0 5 - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 T j - Junction Temperature (°C) 240 95 9599 0 V Ztn = VZt/VZ (25 °C) 0 TK VZ = 10 x 10 -4/K 8 x 10-4/K 2 x 10-4/K 6 x 10-4/K 4 x 10-4/K - 4 x 10-4/K - 2 x 10-4/K 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 V F - Forward Voltage (V) T j = 25 °C |
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