Document Number: 81033

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

Rev. 1.9, 04-Sep-08

233

TSML1000, TSML1020, TSML1030, TSML1040

High Power Infrared Emitting Diode,

RoHS Compliant, 940 nm, GaAlAs/GaAs

Vishay Semiconductors

Note

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current vs. Ambient Temperature

Note

Power dissipation

190

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s

< 260

°C

Thermal resistance junction/ambient

Soldered on PCB, pad dimensions:

4 mm x 4 mm

400

°C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

20

40

60

80

100

120

140

160

180

200

16187

100

90

80

70

60

50

40

30

20

10

0

0

20

40

60

80

100

120

16188

0

T

90

80

70

60

50

40

30

20

10

100

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

1.2

1.5

V

2.6

V

- 1.8

mV/K

Reverse current

10

µA

Junction capacitance

25

pF

Radiant intensity

37

15

mW/sr

Radiant power

φ

e

35

mW

Temperature coefficient of

φ

e

TK

φ

e

- 0.6

%/K

Angle of half intensity

ϕ

± 12

deg

Peak wavelength

λ

p

940

nm

Spectral bandwidth

Δλ

50

nm

Temperature coefficient of

λ

p

TK

λ

p

0.2

nm/K

Rise time

800

ns

Fall time

800

ns

Virtual source diameter

d

1.2

mm