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UB20BCT Datasheet(PDF) 2 Page - Vishay Siliconix |
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UB20BCT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page New Product U(B)20BCT thru U(B)20DCT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89017 Revision: 13-May-08 2 Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode (1) IF = 5.0 A IF = 10 A TJ = 25 °C VF 0.854 0.931 - 1.00 V IF = 5.0 A IF = 10 A TJ = 100 °C 0.760 0.834 - 0.91 Reverse current per diode (2) rated VR TJ = 25 °C TJ = 100 °C IR 1.2 120 15 500 µA Reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 26 35 ns Reverse recovery time per diode IF = 10 A, dIdt = 20 A/µs, VR = 200 V, Irr = 0.1 IRM trr 73 80 ns Stored charge per diode Qrr 30 - nC Forward recovery time per diode IF = 10 A, dI/dt = 80 A/µs, VF = 1.1 x VF max. tfr 160 - ns Peak forward voltage per diode VFP 2.6 - V THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL U20xCT UB20xCT UNIT Typical thermal resistance per diode RθJC 3.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB U20DCT-E3/4W 1.87 4W 50/tube Tube TO-263AB UB20DCT-E3/4W 1.37 4W 50/tube Tube TO-263AB UB20DCT-E3/8W 1.37 8W 800/reel Tape and reel Figure 1. Maximum Forward Current Derating Curve 20 24 16 12 8 4 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Resistive or Inductive Load U20xCT UB20xCT Figure 2. Forward Power Loss Characteristics Per Diode 12 10 8 6 4 2 0 0246 8 10 12 Average Forward Current (A) D = 0.1 D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = 0.2 D = t p/T t p T |
Similar Part No. - UB20BCT |
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