New Product

UG(F,B)8HCT & UG(F,B)8JCT

Vishay General Semiconductor

Document Number: 88766

Revision: 09-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

3

RATINGS AND CHARACTERISTICS CURVES

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

0

0

12

10

6

8

2

4

25

50

75

100

125

150

Case Temperature (°C)

UG8JCT, UGB8JCT

UGF8JCT

P.C.B. with 7.5 x 7.5 x 0.3 cm

Copper Pad

1

100

10

0

20

40

60

80

100

Number of Cycles at 60 Hz

0.5

1.0

1.5

2.0

2.5

Instantaneous Forward Voltage (V)

0.01

0.1

10

100

1

T

Pulse Width = 300 µs

1 % Duty Cycle

Figure 4. Typical Reverse Leakage Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Reverse Switching Characteristics Per Diode

60

40

20

0

100

80

10

100

1000

10 000

1

T

T

T

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

10

1

100

100

10

1

T

f = 1.0 MHz

V

0

120

140

100

60

80

20

40

25

50

75

100

125

150

Q

rr

T

rr

I

V

dI/dt =

240 A/µs

60 A/µs

50 A/µs

50 A/µs

60 A/µs

240 A/µs

Junction Temperature (°C)