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UH20FCT Datasheet(PDF) 2 Page - Vishay Siliconix |
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UH20FCT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page New Product UH20FCT& UHB20FCT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88964 Revision: 13-May-08 2 Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Maximum reverse current per diode (2) VR = 300 V TJ = 25 °C TJ = 125 °C IR 0.5 25 5 150 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 25 ns Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM trr 28 35 ns Typical softness factor (tb/ta) IF = 10 A, dI/dt = 200 A/µs, VR = 200 V, TJ = 125 °C per diode S0.36 - - Typical reverse recovery current IRM 7.0 - A Typical stored charge Qrr 160 - nC Typical forward recovery time per diode IF = 10 A, dI/dt = 80 A/µs, VFR = 1.1 x VF max. tfr 150 - ns ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UH20FCT UHB20FCT UNIT Typical thermal resistance per diode RθJC 2.0 2.0 °C/W ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UH20FCT-E3/4W 1.88 4W 50/tube Tube TO-263AB UHB20FCT-E3/4W 1.38 4W 50/tube Tube TO-263AB UHB20FCT-E3/8W 1.38 8W 800/reel Tape and reel Figure 1. Maximum Forward Current Derating Curve 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 Case Temperature (°C) Figure 2. Forward Power Loss Characteristics Per Diode 0 1 2 3 4 5 6 7 8 9 10 11 12 0246 8 10 12 Average Forward Current (A) D = 0.3 D = 0.5 D = 0.8 D = 1.0 D = 0.2 D = 0.1 D = t p/T t p T |
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