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S07G-GS08 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # S07G-GS08
Description  Small Signal Fast Switching Diode, High Voltage
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

S07G-GS08 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85733
Rev. 1.8, 13-Apr-05
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Averaged over any 20 ms period
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
2) Mounted on epoxy substrate with 3 x 3 mm CU pads (
≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
3) Pulse test: 300
µ pulse width, 1 % duty cycle
Parameter
Test condition
Part
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
S07B
VRRM
100
V
S07D
VRRM
200
V
S07G
VRRM
400
V
S07J
VRRM
600
V
S07M
VRRM
1000
V
Maximum RMS voltage
S07B
VRMS
70
V
S07D
VRMS
140
V
S07G
VRMS
280
V
S07J
VRMS
420
V
S07M
VRMS
700
V
Maximum DC blocking voltage
S07B
VDC
100
V
S07D
VDC
200
V
S07G
VDC
400
V
S07J
VDC
600
V
S07M
VDC
1000
V
Maximum average forward rectified current
Ttp = 75 °C
1)
IF(AV)
1.5
A
TA = 65 °C
1)
IF(AV)
0.7
A
Peak forward surge current 8.3 ms single
half sine-wave
TL = 25 °C
IFSM
25
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air2)
RthJA
180
K/W
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Maximum instantaneous
forward voltage
1.0 A3)
VF
1.1
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
10
µA
TA = 125 °C
IR
50
µA
Reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
1.8
µs
Typical capacitance at 4 V, MHz
Cj
4pF


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