GBPC2512W datasheet(2/7 Pages) VISHAY

Part #	GBPC2512W

Description	Single Phase Bridge (Power Modules), 25/35 A

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions, contact: ind-modules@vishay.com

Document Number: 93575

2

Revision: 29-Sep-08

GBPC.. Series

Vishay High Power Products

Single Phase Bridge

(Power Modules), 25/35 A

ELECTRICAL SPECIFICATIONS

Note

(1) See Ordering Information table at the end of datasheet

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK AC

REVERSE VOLTAGE

TJ = TJ MAXIMUM

V

VRSM, MAXIMUM NON-REPETITIVE

PEAK AC REVERSE VOLTAGE

TJ = TJ MAXIMUM

V

IRRM MAXIMUM AT

RATED VRRM

TJ = TJ MAXIMUM

mA

IRRM MAXIMUM

DC REVERSE

CURRENT AT

TJ = 125 °C

µA

GBPC25/35..A (1)

GBPC25/35..W

02

200

275

2

500

04

400

500

06

600

725

08

800

900

10

1000

1100

12

1200

1300

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

GBPC25 GBPC35

UNITS

Maximum DC output current

at case temperature

IO

Resistive or inductive load

25

35

A

Capacitive load

20

28

60

55

°C

Maximum peak, one-cycle

non-repetitive forward current

IFSM

t = 10 ms

No voltage

reapplied

Initial TJ = TJ maximum

400

475

A

t = 8.3 ms

420

500

t = 10 ms

100 % VRRM

reapplied

335

400

t = 8.3 ms

350

420

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

790

1130

A2s

t = 8.3 ms

725

1030

t = 10 ms

100 % VRRM

reapplied

560

800

t = 8.3 ms

512

730

Maximum I2

√t for fusing

I2

√tI2t for time t

x = I

2

√t x √t

x; 0.1 ≤ tx ≤ 10 ms, VRRM = 0 V

7.9

11.3

kA2

√s

Low level of threshold voltage

VF(TO)1

(16.7 % x

π x I

F(AV) < I < π x IF(AV)), TJ maximum

0.76

0.77

V

High level of threshold voltage

VF(TO)2

(I >

π x I

F(AV)), TJ maximum

0.89

0.92

Low level forward slope resistance

rt1

(16.7 % x

π x I

F(AV) < I < π x IF(AV)), TJ maximum

8.2

4.852

m

Ω

High level forward slope resistance

rt2

(I >

π x I

F(AV)), TJ maximum

6.8

3.867

Maximum forward voltage drop

VFM

TJ = 25 °C, IFM = IFavg (arm)

1.1

V

Maximum DC reverse current

IRRM

TJ = 25 °C, per diode at VRRM

5.0

µA

RMS isolation voltage base plate

VINS

f = 50 Hz, t = 1 s

2700

V

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