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ILD251 Datasheet(PDF) 2 Page - Vishay Siliconix |
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ILD251 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83618 336 Rev. 1.4, 09-May-08 IL250/251/252/ILD250/251/252 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection Note Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Forward continuous current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter base breakdown voltage BVEBO 5.0 V Collector base breakdown voltage BVCBO 70 V Power dissipation single channel Pdiss 200 mW Power dissipation dual channel Pdiss 150 mW Derate linearly from 25 °C single channel 2.6 mW/°C Derate linearly from 25 °C dual channel 2.0 mW/°C COUPLER Isolation test voltage (between emitter and detector referred to standard climate 23 °C/ 50 % RH, DIN 50014) VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Total dissipation single channel Ptot 250 mW Total dissipation dual channel Ptot 400 mW Derate linearly from 25 °C single channel 3.3 mW/°C Derate linearly from 25 °C dual channel 5.3 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = ± 10 mA VF 1.2 1.5 V OUTPUT Collector emitter breakdown voltage IC = 1.0 mA BVCEO 30 50 V Emitter base breakdown voltage IE = 100 µA BVEBO 7.0 10 V Collector base breakdown voltage IC = 10 µA BVCBO 70 90 V Collector emitter leakage current VCE = 10 V ICEO 5.0 50 nA COUPLER Collector emitter saturation voltage IF = ± 16 mA, IC = 2.0 mA VCEsat 0.4 V |
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