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MAX13101EEWX+ Datasheet(PDF) 2 Page - Maxim Integrated Products |
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MAX13101EEWX+ Datasheet(HTML) 2 Page - Maxim Integrated Products |
2 / 18 page 16-Channel Buffered CMOS Logic-Level Translators 2 _______________________________________________________________________________________ ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (VCC = +1.65V to +5.5V, VL = +1.2V to VCC, EN = VL (MAX13101E/MAX13102E/MAX13103E), MULT = VL or GND (MAX13108E), TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +1.65V, VL = +1.2V, TA = +25°C.) (Notes 1, 2) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (All voltages referenced to GND.) VCC ...........................................................................-0.3V to +6V VL...........................................................................................-0.3V to +6V I/O VCC_......................................................-0.3V to (VCC + 0.3V) I/O VL_.....................................................................-0.3V to (VL + 0.3V) EN, MULT .................................................................-0.3V to +6V Short-Circuit Duration I/O VL_, I/O VCC_ to GND .......Continuous Continuous Power Dissipation (TA = +70°C) 36-Bump WLP (derate 17.0mW/°C above +70°C).....1361mW 40-Pin TQFN (derate 35.7mW/°C above +70°C) .......2857mW Operating Temperature Range ...........................-40°C to +85°C Maximum Junction Temperature .....................................+150°C Storage Temperature Range ............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLIES VL Supply Range VL 1.2 VCC V VCC Supply Range VCC 1.65 5.50 V Supply Current from VCC IQVCC I/O VCC_ = GND, I/O VL _ = GND or I/O VCC_ = VCC, I/O VL _ = VL, EN = VL, MULT = GND or VL 0.03 10 µA Supply Current from VL IQVL I/O VCC_ = GND, I/O VL _ = GND or I/O VCC_ = VCC, I/O VL _ = VL, EN = VL, MULT = GND or VL 0.03 20 µA VCC Shutdown Supply Current ISHDN-VCC TA = +25 °C, EN = GND, I/O VCC_ = GND, I/O VL _ = GND, MAX13101E/MAX13102E/MAX13103E 0.03 1µA VL Shutdown Supply Current ISHDN-VL TA = +25 °C, EN = GND, I/O VCC_ = GND, I/O VL _ = GND, MAX13101E/MAX13102E/MAX13103E 0.03 2µA TA = +25 °C, EN = GND, MAX13102E/MAX13103E 0.02 1 I/O VCC_ Tri-State Output Leakage Current TA = +25 °C, MULT = GND (I/O VCC1 - I/O VCC 8) or MULT = VL (I/O VCC 9 - I/O VCC 16) MAX13108E 0.02 1 µA TA = +25 °C, EN = GND, MAX13101E/ MAX13103E 0.02 1 I/O VL _ Tri-State Output Leakage Current TA = +25 °C, MULT = GND (I/O VL1 - I/O VL8) or MULT = VL (I/OVL9 - I/O VL16) MAX13108E 0.02 1 µA I/O VL _ Pulldown Resistance During Shutdown EN = GND, MAX13102E 4 10 k Ω |
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