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BAS32L Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS32L Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page BAS32L_6 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 06 — 29 October 2008 4 of 10 NXP Semiconductors BAS32L High-speed switching diode FR4 PCB, standard footprint (1) Tj = 175 °C; typical values (2) Tj =25 °C; typical values (3) Tj =25 °C; maximum values Fig 1. Forward current as a function of ambient temperature; derating curve Fig 2. Forward current as a function of forward voltage Based on square wave currents. Tj =25 °C prior to surge (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 20 V; typical values Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values Fig 4. Reverse current as a function of junction temperature 0 100 200 300 200 0 100 mbg451 Tamb (°C) IF (mA) 012 600 0 200 400 mbg464 VF (V) IF (mA) (1) (2) (3) mbg704 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 0 100 Tj (°C) 200 103 102 10−1 10−2 10 (1) (2) 1 IR ( µA) mgd006 (3) |
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