BLF878 datasheet(3/18 Pages) NXP

Part #	BLF878

Description	UHF power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF878_1

Preliminary data sheet

Rev. 01 — 15 December 2008

3 of 18

NXP Semiconductors

BLF878

UHF power LDMOS transistor

4.

Limiting values

5.

Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions.

[2]

Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.

6.

Characteristics

[1]

ID is the drain current.

[2]

Capacitance values without internal matching.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

89

V

VGS

gate-source voltage

−0.5

+13

V

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

200

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =80 °C;

PL(AV) = 150 W

[1]

0.23

K/W

Rth(c-h)

thermal resistance from case to heatsink

[2]

0.15

K/W

Table 6.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 2.25 mA [1] 89

-

105

V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 225 mA [1] 1.4

1.9

2.4

V

IDSS

drain leakage current

VGS =0V; VDS =40V

-

2.8

µA

IDSX

drain cut-off current

VGS =VGSth + 3.75 V;

VDS =10V

-39

-

A

IGSS

gate leakage current

VGS = 10 V; VDS = 0 V

-

280

nA

gfs

forward transconductance

VGS = 10 V; ID = 11.2 A

[1]

-

15.5

-

S

RDS(on)

drain-source on-state resistance VGS =VGSth + 3.75 V;

ID = 7.6 A

[1]

-

110

-

m

Ω

Ciss

input capacitance

VGS = 0 V; VDS =40V;

f=1MHz

[2]

-

190

-

pF

Coss

output capacitance

VGS = 0 V; VDS =40V;

f=1MHz

[2]

-60

-

pF

Crss

reverse transfer capacitance

VGS = 0 V; VDS =40V;

f=1MHz

[2]

-2

-

pF

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