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BLF878 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF878 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 18 page BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 3 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor 4. Limiting values 5. Thermal characteristics [1] Rth(j-c) is measured under RF conditions. [2] Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device. 6. Characteristics [1] ID is the drain current. [2] Capacitance values without internal matching. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 89 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =80 °C; PL(AV) = 150 W [1] 0.23 K/W Rth(c-h) thermal resistance from case to heatsink [2] 0.15 K/W Table 6. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 2.25 mA [1] 89 - 105 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 225 mA [1] 1.4 1.9 2.4 V IDSS drain leakage current VGS =0V; VDS =40V - - 2.8 µA IDSX drain cut-off current VGS =VGSth + 3.75 V; VDS =10V -39 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA gfs forward transconductance VGS = 10 V; ID = 11.2 A [1] - 15.5 - S RDS(on) drain-source on-state resistance VGS =VGSth + 3.75 V; ID = 7.6 A [1] - 110 - m Ω Ciss input capacitance VGS = 0 V; VDS =40V; f=1MHz [2] - 190 - pF Coss output capacitance VGS = 0 V; VDS =40V; f=1MHz [2] -60 - pF Crss reverse transfer capacitance VGS = 0 V; VDS =40V; f=1MHz [2] -2 - pF |
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