BLF878 datasheet(1/18 Pages) NXP

Part #	BLF878

Description	UHF power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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1.

Product proﬁle

1.1 General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 300 W broadband over the full UHF band from

470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this

device makes it ideal for digital transmitter applications.

[1]

Black video signal, sync expansion: input sync = 33 %; output sync

≥ 27 %.

[2]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

1.2 Features

I 2-tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent

drain current IDq = 1.4 A:

N Peak envelope power load power = 300 W

N Power gain = 21 dB

N Drain efﬁciency = 46 %

N Third order intermodulation distortion = −35 dBc

I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent

drain current IDq = 1.4 A:

N Average output power = 75 W

N Power gain = 21 dB

N Drain efﬁciency = 32 %

N Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)

BLF878

UHF power LDMOS transistor

Rev. 01 — 15 December 2008

Preliminary data sheet

Table 1.

Typical performance

RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit.

Mode of operation f

PL

PL(PEP) PL(AV) Gp

η

D

IMD3

(MHz)

(W)

(dB) (%) (dBc)

CW, class AB

860

300

-

21

60

-

2-tone, class AB

f1 = 860; f2 = 860.1 -

300

-

21

46

−35

PAL BG

860 (ch69)

300 (peak sync.) [1] -

-

21

45

-

DVB-T (8k OFDM)

858

-

75

21

32

−32 [2]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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