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HEF40098BP Datasheet(PDF) 4 Page - NXP Semiconductors |
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HEF40098BP Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page HEF40098B_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 31 October 2008 4 of 12 NXP Semiconductors HEF40098B 3-state hex inverting buffer 9. Recommended operating conditions 10. Static characteristics Table 5. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VDD supply voltage 3 - 15 V VI input voltage 0 - VDD V Tamb ambient temperature in free air −40 - +85 °C ∆t/∆V input transition rise and fall rate VDD = 5 V - - 3.75 ns/V VDD = 10 V - - 0.5 ns/V VDD = 15 V - - 0.08 ns/V Table 6. Static characteristics VSS = 0 V; VI = VSS or VDD; unless otherwise specified. Symbol Parameter Conditions VDD Tamb = −40 °C Tamb = 25 °C Tamb = 85 °C Unit Min Max Min Max Min Max VIH HIGH-level input voltage |IO| < 1 µA 5 V 3.5 - 3.5 - 3.5 - V 10 V 7.0 - 7.0 - 7.0 - V 15 V 11.0 - 11.0 - 11.0 - V VIL LOW-level input voltage |IO| < 1 µA 5 V - 1.5 - 1.5 - 1.5 V 10 V - 3.0 - 3.0 - 3.0 V 15 V - 4.0 - 4.0 - 4.0 V VOH HIGH-level output voltage |IO| <1 µA 5 V 4.95 - 4.95 - 4.95 - V 10 V 9.95 - 9.95 - 9.95 - V 15 V 14.95 - 14.95 - 14.95 - V VOL LOW-level output voltage |IO| <1 µA 5 V - 0.05 - 0.05 - 0.05 V 10 V - 0.05 - 0.05 - 0.05 V 15 V - 0.05 - 0.05 - 0.05 V IOH HIGH-level output current VO = 2.5 V 5 V −3.8 - −3.2 - −2.5 - mA VO = 4.6 V 5 V −1.2 - −1.0 - −0.8 - mA VO = 9.5 V 10 V −3.8 - −3.2 - −2.5 - mA VO = 13.5 V 15 V −12.0 - −10.0 - −8.0 - mA IOL LOW-level output current VO = 0.4 V; 4.75 V 3.5 - 2.9 - 2.3 - mA VO = 0.5 V; 10 V 12.0 - 10.0 - 8.0 - mA VO = 1.5 V; 15 V 24.0 - 20.0 - 16.0 - mA II input leakage current VI = 0 V or 15 V 15 V - 0.3 - 0.3 - 1.0 µA IDD supply current IO = 0A 5V - 4 - 4 - 30 µA 10 V - 8 - 8 - 60 µA 15 V - 16 - 16 - 120 µA IOZ OFF-state output current 15 V - 1.6 - 1.6 - 12.0 µA CI input capacitance - - - 7.5 - - pF |
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