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MMBZ12VAL Datasheet(PDF) 8 Page - NXP Semiconductors |
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MMBZ12VAL Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 8 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression MMBZ27VAL: unidirectional and bidirectional Tamb =25 °C Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values Fig 4. Relative variation of rated peak pulse power as a function of junction temperature; typical values f = 1 MHz; Tamb =25 °C (1) MMBZ15VAL: unidirectional (2) MMBZ15VAL: bidirectional (3) MMBZ27VAL: unidirectional (4) MMBZ27VAL: bidirectional MMBZ27VAL: VRWM =22V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Reverse leakage current as a function of ambient temperature; typical values 006aab320 102 10 103 PPPM (W) 1 tp (ms) 10−2 103 102 10−1 10 1 Tj (°C) 0 200 150 50 100 006aab321 0.4 0.8 1.2 PPPM 0 PPPM(25°C) VR (V) 025 20 10 15 5 006aab322 40 60 20 80 100 Cd (pF) 0 (1) (2) (3) (4) 006aab323 10−1 10−2 10 1 102 IRM (nA) 10−3 Tamb (°C) −75 175 125 25 75 −25 |
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