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NE57810S Datasheet(PDF) 1 Page - NXP Semiconductors

Part # NE57810S
Description  Advanced DDR memory termination power with external reference voltage in
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

NE57810S Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Introduction
The NE57810 is designed to provide power for termination of a Double Data Rate (DDR)
SDRAM memory bus. It significantly reduces parts count, board space, and overall
system cost compared to previous solutions.
2.
General description
The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus
voltage) that is half the RAM supply voltage. It is capable of providing up to
± 3.5 A for
sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at
start-up. Overtemperature shutdown protects the device in extreme temperature
situations.
The package is thermally robust for flexibility of thermal design. The NE57810 is a linear
regulator so no external inductors or switching FETs are necessary. Fast response to load
changes reduces the need for output capacitors.
3.
Features
I Fast transient response time
I Overtemperature protection
I Overcurrent protection
I Commercial (0 °C to +70 °C) temperature range
I Reduced need for external components (switching FETs, inductors, decoupling
capacitors)
I Internal divider maintains termination voltage at half the memory supply voltage
I Reference out for other memory and control components
I Optional external voltage reference in for flexible application
I Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems
4.
Applications
I Desktop microcomputer systems
I Workstations
I Servers
I Game machines
I Set top boxes
I Embedded systems
NE57810
Advanced DDR memory termination power with external
reference voltage in
Rev. 04 — 24 November 2008
Product data sheet


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