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NE57810S Datasheet(PDF) 1 Page - NXP Semiconductors |
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NE57810S Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 16 page 1. Introduction The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions. 2. General description The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A for sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at start-up. Overtemperature shutdown protects the device in extreme temperature situations. The package is thermally robust for flexibility of thermal design. The NE57810 is a linear regulator so no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors. 3. Features I Fast transient response time I Overtemperature protection I Overcurrent protection I Commercial (0 °C to +70 °C) temperature range I Reduced need for external components (switching FETs, inductors, decoupling capacitors) I Internal divider maintains termination voltage at half the memory supply voltage I Reference out for other memory and control components I Optional external voltage reference in for flexible application I Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems 4. Applications I Desktop microcomputer systems I Workstations I Servers I Game machines I Set top boxes I Embedded systems NE57810 Advanced DDR memory termination power with external reference voltage in Rev. 04 — 24 November 2008 Product data sheet |
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