NX3L2T66GT datasheet(6/18 Pages) NXP

Part #	NX3L2T66GT

Description	Low-ohmic single-pole single-throw analog switch

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Manufacturer	NXP [NXP Semiconductors]

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6 / 18 page

NX3L2T66_1

Product data sheet

Rev. 01 — 4 December 2008

6 of 18

NXP Semiconductors

NX3L2T66

Low-ohmic single-pole single-throw analog switch

11.1 Test circuits

11.2 ON resistance

[1]

Typical values are measured at Tamb =25 °C.

[2]

Measured at identical VCC, temperature and input voltage.

[3]

Flatness is deﬁned as the difference between the maximum and minimum value of ON resistance measured at identical VCC and

temperature.

VI = 0.3 V or VCC − 0.3 V; VO =VCC − 0.3 V or 0.3 V.

VI = 0.3 V or VCC − 0.3 V; VO = open circuit.

Fig 5.

Test circuit for measuring OFF-state leakage

current

Fig 6.

Test circuit for measuring ON-state leakage

current

001aaj221

IS

VI

VIL

VO

VCC

GND

nY

nZ

nE

001aaj222

IS

VI

VIH

VO

VCC

GND

nY

nZ

nE

Table 8.

ON resistance

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

RON(peak) ON resistance (peak)

VI = GND to VCC;

ISW = 100 mA;

see Figure 7

VCC = 1.4 V

-

1.6

3.7

-

4.1

Ω

VCC = 1.65 V

-

1.0

1.6

-

1.7

Ω

VCC = 2.3 V

-

0.55

0.8

-

0.9

Ω

VCC = 2.7 V

-

0.5

0.75

-

0.9

Ω

∆RON

ON resistance mismatch

between channels

VI = GND to VCC;

ISW = 100 mA

[2]

VCC = 1.4 V

-

0.04

0.3

-

0.3

Ω

VCC = 1.65 V

-

0.04

0.2

-

0.3

Ω

VCC = 2.3 V

-

0.02

0.08

-

0.1

Ω

VCC = 2.7 V

-

0.02

0.075

-

0.1

Ω

RON(ﬂat)

ON resistance (ﬂatness) VI = GND to VCC;

ISW = 100 mA

[3]

VCC = 1.4 V

-

1.0

3.3

-

3.6

Ω

VCC = 1.65 V

-

0.5

1.2

-

1.3

Ω

VCC = 2.3 V

-

0.15

0.3

-

0.35

Ω

VCC = 2.7 V

-

0.13

0.3

-

0.35

Ω

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