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NX3L2T66GT Datasheet(PDF) 6 Page - NXP Semiconductors |
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NX3L2T66GT Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 18 page NX3L2T66_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 4 December 2008 6 of 18 NXP Semiconductors NX3L2T66 Low-ohmic single-pole single-throw analog switch 11.1 Test circuits 11.2 ON resistance [1] Typical values are measured at Tamb =25 °C. [2] Measured at identical VCC, temperature and input voltage. [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. VI = 0.3 V or VCC − 0.3 V; VO =VCC − 0.3 V or 0.3 V. VI = 0.3 V or VCC − 0.3 V; VO = open circuit. Fig 5. Test circuit for measuring OFF-state leakage current Fig 6. Test circuit for measuring ON-state leakage current 001aaj221 IS IS VI VIL VO VCC GND nY nZ nE 001aaj222 IS VI VIH VO VCC GND nY nZ nE Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max RON(peak) ON resistance (peak) VI = GND to VCC; ISW = 100 mA; see Figure 7 VCC = 1.4 V - 1.6 3.7 - 4.1 Ω VCC = 1.65 V - 1.0 1.6 - 1.7 Ω VCC = 2.3 V - 0.55 0.8 - 0.9 Ω VCC = 2.7 V - 0.5 0.75 - 0.9 Ω ∆RON ON resistance mismatch between channels VI = GND to VCC; ISW = 100 mA [2] VCC = 1.4 V - 0.04 0.3 - 0.3 Ω VCC = 1.65 V - 0.04 0.2 - 0.3 Ω VCC = 2.3 V - 0.02 0.08 - 0.1 Ω VCC = 2.7 V - 0.02 0.075 - 0.1 Ω RON(flat) ON resistance (flatness) VI = GND to VCC; ISW = 100 mA [3] VCC = 1.4 V - 1.0 3.3 - 3.6 Ω VCC = 1.65 V - 0.5 1.2 - 1.3 Ω VCC = 2.3 V - 0.15 0.3 - 0.35 Ω VCC = 2.7 V - 0.13 0.3 - 0.35 Ω |
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