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PESD5V0U1UA Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD5V0U1UA Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page PESD5V0U1UA_UB_UL_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 30 October 2008 3 of 12 NXP Semiconductors PESD5V0U1UA/UB/UL Ultra low capacitance unidirectional ESD protection diodes 5. Limiting values [1] Device stressed with ten non-repetitive ESD pulses. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7. ESD maximum ratings Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1] -9 kV MIL-STD-883 (human body model) -10 kV Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. ESD pulse waveform according to IEC 61000-4-2 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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